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01300 TA8227AP F2010 2SC1573A Q4035NH5 ON0548 74HC165 AHYBA
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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-126 package Complement to type 2N6037/6038/6039 DARLINGTON High DC current gain APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications
PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base
2N6034 2N6035 2N6036
Absolute maximum ratings(Ta=ae )
SYMBOL PARAMETER

2N6034
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
INC
NG S HA
2N6035 2N6036 2N6034 2N6035 2N6036
Open emitter
CON EMI
CONDITIONS
TOR DUC
VALUE -40 -60 -80 -40 -60 -80
UNIT
V
Open base
V
VEBO IC ICM IB PD Tj Tstg
Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature
Open collector
-5 -4 -8 -0.1
V A A A W ae ae
TC=25ae
40 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2N6034 VCEO(SUS) Collector-emitter sustaining voltage 2N6035 2N6036 VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current IC=-2A; IB=-8mA IC=-4A; IB=-40mA IC=-4A; IB=-40mA IC=-2A ; VCE=-3V IC=-0.1A ;IB=0
2N6034 2N6035 2N6036
SYMBOL
CONDITIONS
MIN -40 -60 -80
TYP.
MAX
UNIT
V
-2.0 -3.0 -4.0 -2.8 -0.1
V V V V mA mA mA mA
Collector cut-off current Collector cut-off current

VCE=Rated VCEO; IB=0 VCE=Rated VCEO; VBE(off)=1.5V TC=125ae VCB=Rated VCBO; IE=0 VEB=-5V; IC=0
Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance
INC
NG S HA
OND MIC E
TOR UC
-0.1 -0.5 -0.1 -2.0
IC=-0.5A ; VCE=-3V IC=-2A ; VCE=-3V IC=-4A ; VCE=-3V
500 750 100 200 pF 15000
IE=0;VCB=-10V;f=0.1MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6034 2N6035 2N6036
NG S HA
INC
CON EMI
TOR DUC
Fig.2 outline dimensions
3


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